High-frequency pair-splitting current in narrow superconducting films

The relation between the critical de current in thin narrow tin films and the power of shf radiation within the X-band near the critical temperature Tc was studied experimentally. The critical high-frequency power has been determined here as a function of the temperature and of the mean free path of electrons. It has also been shown that these relations agree closely with theoretical results based on an analysis of the Ginzberg-Landau pair-splitting mechanism. It has been confirmed experimentally, furthermore, that in an alternating field of intensity Ec an electron pair acquires, after having traversed the coherence path ζ(T), an energy equal to its binding energy.

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