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Critical magnetic fields of ultrathin bismuth films

B.G. LazarevPhysicotechnical Institute, Academy of Sciences of the Ukrainian SSR, Khar’kovE. E. SemenenkoPhysicotechnical Institute, Academy of Sciences of the Ukrainian SSR, Khar’kovV. I. TutovPhysicotechnical Institute, Academy of Sciences of the Ukrainian SSR, Khar’kov
ABI

Аннотация

Critical transverse magnetic fields were measured in bismuth films 70 to 18 Å thick. It was found that for the temperature range (5–1.8°K) and fields investigated the relation HC(T) is linear in bismuth layers freshly condensed on a liquid-helium-cooled substrate. The slope dHc/dT increases as the film thickness decreases, attaining a value of 95,000 Oe/deg for the thinnest films. This increase is correlated with the increase in film resistivity, i.e., with the reduction in the mean free path of the conduction-band electrons. The value of the factor A obtained from the value of the critical magnetic field for a film about 20 Å thick (Hc = A·104Tc) is 9.5. Thus, in ultrathin bismuth films the critical magnetic field is much higher than the paramagnetic limit. This behavior is explained by the large spin-orbit scattering in freshly-deposited ultrathin bismuth films. When the thickness of the bismuth film decreases from 40 to 10 Å, the density of states falls off by approximately a factor of two.

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