Low-energy localized states in a ferromagnetic semiconductor with magnetic impurities
T. G. PetrovaPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR
ABI
Аннотация
The low-energy localized states appearing in the spectrum of a ferromagnetic semiconductor doped with magnetic impurities are investigated. Both ferro- and antiferromagnetic type s-d exchange of an electron with lattice atoms are considered. In the investigation of impurity states both direct and s-d exchange interactions are taken into account. The energies of localized states lying below the continuous spectrum and corresponding to the ground state of the system are calculated. It is shown that allowance for the direct exchange has considerable influence on the depth and spectral position of these levels, leading to qualitatively new results.
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