Quantum resistance oscillations of Bi1–<i>x</i>Sb<i>x</i> alloy films at 4.2–300°K temperatures

The electrical resistivity of Bi1–xSbx alloy films has been measured at 4.2–300 °K. A temperature dependence of the amplitudes of the quantum-dimensional resistivity oscillations is constructed in specimens with different composition 0≦x≦0.14. It is shown that a model taking account of near-surface bending of the bands should be used to describe the temperature attenuation of the oscillations, as in the case of pure bismuth. Changes in the energy spectrum in alloy films with the change in composition are estimated.

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