Статья

Orientational Population of Quantum States for Fast Electrons in Planar Channeling

С. В. ПлотніковInstitute of Nuclear Physics, Tomsk Polytechnical InstituteД. Е. ПоповInstitute of Nuclear Physics, Tomsk Polytechnical InstituteE. I. RozumInstitute of Nuclear Physics, Tomsk Polytechnical InstituteO. G. KostarevaInstitute of Nuclear Physics, Tomsk Polytechnical InstituteS.A. VorobievInstitute of Nuclear Physics, Tomsk Polytechnical Institute

physica status solidi (b)journal1981en

ABI

Аннотация

Abstract The strong orientation dependence of angular distributions for 4.9 MeV electrons channeled along the (110) atomic planes through crystalline Si is observed and investigated in detail. For electron transmission along the 〈111〉 axis and (110) planes a considerable increase of the X‐ray yield is observed. These experimental results are explained by the orientation population of the different quantum states for channeled electrons.

Темы

Crystallography and Radiation Phenomena Nuclear materials and radiation effects Advanced Electron Microscopy Techniques and Applications

Идентификаторы

DOI: 10.1002/pssb.2221030106

Цитирования и источники

Цитирований: 1 Использованных источников: 9

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