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Effect of localized electron-magnon states on magnetic ordering in doped ferromagnetic semiconductors

T. G. PetrovaPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Khar’kov
ABI

Аннотация

Localized electron-magnon states, arising below the continuous spectrum of a ferromagnetic semiconductor with a donor impurity having a magnetic moment is studied with the use of the microscopic s-d model. Impurity states in which electron localization at a defect is accompanied by a different number of spin deviations from the direction of magnetic ordering are examined. The energies and average values of the z projection of the impurity spin in such states are found, using the Jacobi matrix method, for different values of the parameters describing the s-d exchange interaction of an electron with a defect and with a regular atom. The structure of the energetically most favorable electron-magnon impurity states is determined. It is shown that it depends greatly on the nature of the s-d interactions in the system. The study carried out permits a systematic explanation of the different effect of donors, observed experimentally, on the magnetic ordering of ferromagnetic semiconductors.

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