Singularities in the magnetoresistance of bismuth thin films in the region of quantum corrections
E. I. BukhshtabPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Khar’kovYu. F. KomnikPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Khar’kovА. В. БутенкоPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Khar’kovВ. В. АндриевскииPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Khar’kov
ABI
Аннотация
The anomalous dependences of the resistance of bismuth thin films (∼ 10‒6 cm) on perpendicular and parallel magnetic fields up to 17 kOe were investigated at 1.5–4.2 °K. The resulting relations were compared with the theory which incorporates quantum corrections to the magnetoresistance related to electron localization and the interference of electron-electron and impurity scattering. The corresponding values of the parameters of the theory are consistent with all the dependences investigated: σ(T), σ(H‖), and σ(H⊥).
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