Работы, на которые ссылается эта работа

Работ: 4

Работа: Processes of annealing and defect generation in semiconductors irradiated by supercurrent electron beam

1. Annihilation of Positrons in Electron‐Irradiated Silicon Crystals

   W. Fuhs, U. Holzhauer, S. Mantl +2

   Статья1978Цитирований: 6

   ABIABI:AkademIndex/openalex/2026.other.602636

2. Positron Annihilation and Profiles of Radiation Damages in GaAs and Si Crystals Irradiated by Supercurrent Proton or Electron Beams

   A. D. Pogrebnyak, E. Yu. Boyarko, Yu. Yu. Kryuchkov +1

   СтатьяMuon and positron interactions and applicationsphysica status solidi (a)1984Цитирований: 5

   ABIABI:AkademIndex/openalex/2026.other.520077

3. Study of defect annealing by supercurrent proton beam irradiation and of radiation defect profiles in GaAs by the positron annihilation method

   A. D. Pogrebnyak, В. С. Лопатин, R.G. Ziyakaev +1

   Статья1983Цитирований: 3

   ABIABI:AkademIndex/openalex/2026.other.524820

4. Без названия

   ДругоеЦитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.658678