Exciton-stimulated diffusion of xenon impurity in krypton cryocrystals
I. Ya. Fugol’Physicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Khar’kovA. G. BelovPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Khar’kovE. M. YurtaevaPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Khar’kovV. N. SvishchevPhysicotechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Khar’kov
ABI
Аннотация
The intensity distribution of intrinsic and extrinsic luminescence as a function of the duration of irradiation by low-energy electrons was studied in xenon-krypton solid solutions. Low-temperature accelerated diffusion of xenon impurity atoms was observed at low concentrations. It is shown that this diffusion is stimulated by free excitons of the matrix, and a possible mechanism for this process is proposed. The restructuring of the structure of the solution is described qualitatively based on a model of the transport of excitations in the matrix. The coefficient of exciton-stimulated diffusion is evaluated. The influence of defects in the crystal lattice on the kinetics of the diffusion process is studied.
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