Magnetoresistance of point contacts with spatially nonuniform distribution of defects

The dependence of the resistance of Cu–Bi heterojunctions on the magnitude of the magnetic field H oriented along the contact axis is investigated. It is shown that there are three characteristic intervals H < H1, H1 < H < H2 and H > H2 in which the R(H) dependence is linear, quadratic and again linear, respectively. In the framework of the proposed model, the presence of the first (H < H1) linear segment which cannot be described in the theory of magnetoresistance of homogeneous junctions is associated with the spatial localization of the contaminated region near the point contact. The theoretical analysis of the results of measurements makes it possible to determine the electron mean free path in a junction, its size and the contamination region. The barrier transmittance D at the Cu-Bi heterojunction region is determined.

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