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Acoustoelectric properties of bismuth with nonuniform distribution of structural imperfections

S. V. BengusPhysicolechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, KharkovYu. A. BogodPhysicolechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, KharkovPeter FinkelPhysicolechnical Institute of Low Temperatures, Academy of Sciences of the Ukrainian SSR, Kharkov
ABI

Аннотация

A build-up mode is realized for elastic waves in bismuth single crystals distinguished by the skinning of steady-state electron fluxes due to a nonuniform distribution of structural imperfections [Yu. A. Bogod and Vit. B. Krasovitskii, Fiz. Nizk. Temp. 6, 806 (1980); Yu. A. Bogod, Vit. B. Krasovitskii, and E. T. Lemeshevskaya, Fiz. Nizk. Temp. 11, 161 (1985); ibid. 13, 1087 (1987)]. It is shown that the longitudinal conductivity of the sample in the plane perpendicular to current becomes nonuniform in the nonlinear region of electric fields. A geometry of experiment which is optimal for the generation of acoustoelectric oscillations is found and the relation between oscillations with the motion of acoustoelectric domains is demonstrated graphically. It is concluded that the realization of oscillations depends on the structure of the surface regions of a crystal.

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