On the linear temperature dependence of resistivity in a system with localized and delocalized electrons

In the case of hybridization of two-dimensional band electrons with a system of spatially periodic localized states, the mean free path of charge carriers scattered by defects has a sharp peak for energies E in the vicinity of the hybridization gap edge ε0. For a dirty conductor, this may result in a narrow (∼ΔE) band of states which does not exhibit a quantum localization of electrons. If the chemical potential is close to this band, the temperature dependence of resistivity is found to be linear (for T ≫ ΔE). A change in the carrier concentration leading to a deviation of the chemical potential from the ε0 level is accompanied by the replacement of the linear temperature dependence by an exponential one.

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