On the effect of inelastic interband scattering on the properties of “high-temperature” oscillations (HTO)

The temperature dependence of the amplitude ρ˜ of HTO for the diagonal and nondiagonal components of the magnetoresistance tensor of bismuth and Bi1–xSbx (x = 0.75 and 1.7 at.%) alloys is studied in the temperature range 5–40 K. It is found that the ρ˜(T) dependence can be described quite well by the function τim−1+τepm−1exp(−αT), where τepm−1∝expΘm/T−1−1Θm = ℏSqm/KB = 37 K, α = 0.22 deg−1, and qm is the phonon wave vector corresponding to the separation between the characteristic points [Yu. A. Bogod, Fiz. Nizk.Temp. 12, 1004 (1986)] of the electron and hole branches of the spectrum. The ratios τim−1/τepm−1 of the probabilities of elastic and inelastic interband scattering of charge carriers in bismuth and Bi1−xSbx alloys have been borrowed from the existing data in the literature. The obtained results are compared with the theoretical HTO models [Yu. A. Bogod, Fiz. Nizk. Temp. 12, 1004 (1986); Yu. A. Bogod, L. Yu. Gorelik, and A. A. Slutskin, Fiz. Nizk. Temp. 13, 626 (1987); V. M. Polyanovskii, Pis’ma Zh. Eksp. Teor. Fiz. 46, 108 (1987); Ukr. Fiz. Zh. 33, 1575 (1988); Ukr. Fiz. Zh. 34, 459 (1989)].

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