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Dissipation mechanisms at the resistive transition of HTSC in magnetic field

G. G. SergeevaPhysicotechnical Institute, Akademicheskaya st., 1, 310108 Kharkov
ABI

Аннотация

Experimental studies of the resistive transition in a magnetic field in single crystals with structure of YBa2Cu3O7, Bi2Sr2CaCu2O8 and in thin films are analyzed. Some phenomenological models describing the dissipation mechanism at the resistive transition are discussed and a comparative analysis of dissipation mechanisms is carried out for low-temperature and high-temperature superconductors. Attention is mainly paid to the dissipation mechanisms associated with superconducting fluctuations, viscous flow and creep of magnetic flux in HTSC with an account for the peculiarities of the vortex state in layered superconductors. The substantial temperature interval of the magnetic-field-induced resistive transition broadening is explained by the fact that the strong fluctuation effects in magnetic field entail absence of the phase transition at H = Hc2 (T) and the existence of a vortex fluid.

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