Effective interface density of electron states in semiconductor mixture films†

Abstract Extension of synergetic concepts and their practical application to the determination of effective phase dimensionality (EPD) and the effective interface density of electron states (EIDES) in films made of semiconductor mixtures (SMs) are presented. As an example, films produced by evaporation of Bi2Te3-Sb2Te3 on to polyamide and CdTe on to Mo are considered. The EPD was calculated from experimental data by using the Grassberger and Procaccia (1983 a, b) procedure. Special attention is given to interpreting the EIDES in an SM. A theoretical dependence is formulated for the effective impedance of the SM versus percentage composition, package closeness and surface resistivity of grains. It is shown that the greater the variance, the greater will be the sensitivity of the films. Under loading cycle deformation, interface charge densities change along the grain boundaries in the film, SMs are used as acumulative damage gauge. Changes of microsructure in SMs have some features in common and are determined by continuous measurements of their conductivity changes. Process characteristics of the films are checked by measuring the EIDES.

Перевод пока недоступен