Emittance measurements for the Illinois/CEBAF polarized electron source

The transverse thermal properties of the electrons photoemitted from GaAs determine the intrinsic beam emittance, an important quantity in applications such as polarized electron sources and high-brightness sources. In this paper, emittance measurements using the Illinois/CEBAF polarized electron source are described. The emittance was measured as a function of both the laser beam spot size and laser wavelength at low currents. The data was used to infer the transverse thermal energy of the electrons photoemitted from GaAs for wavelengths between 514 and 840 nm. Near the bandgap the transverse energy is {approximately}34 meV, a factor of 3 lower than that of the beam from a typical thermionic electron gun. 8 refs., 2 figs.

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