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Работы, на которые ссылается эта работа
Работ: 16
Работа: Study of photoluminescence spectra of GaMnAs produced by low-temperature molecular beam epitaxy
Spin disorder scattering mechanism of ferromagnetic Ga1−xMnxAs layers on (100) GaAs substrates
Im Taek Yoon, Tae Won Kang, K. H. Kim +1
Статья2004Цитирований: 7ABIOptical characterisation of MOVPE-grown Ga1−Mn As semimagnetic semiconductor layers
Th. Hartmann, M. Lampalzer, W. Stolz +4
Статья2000Цитирований: 4ABILow-temperature molecular beam epitaxial growth of GaAs and (Ga,Mn)As
Aidong Shen, F. Matsukura, Shiping Guo +5
Статья1999Цитирований: 4ABI(GaMn)As: GaAs-based III–V diluted magnetic semiconductors grown by molecular beam epitaxy
Takashi Hayashi, Masaaki Tanaka, Tatau Nishinaga +3
Статья1997Цитирований: 3ABIOptimization of GaMnAs growth in low temperature molecular beam epitaxy
Kyung-Hyun Kim, Jong-Hoon Park, Byung-Doo Kim +4
Статья2002Цитирований: 3ABIOptical transitions of liquid phase epitaxy grown (Ga,Mn)As in magnetic fields
Статья2003Цитирований: 3ABIInfluence of manganese contamination on high-mobility GaAs∕AlGaAs heterostructures
K. Wagenhuber, H.-P. Tranitz, M. Reinwald +1
Статья2004Цитирований: 3ABIInfluence of manganese contamination on high-mobility GaAs/AlGaAs heterostructures
K. Wagenhuber, H. -p. Tranitz, M. Reinwald +1
Статья2004Цитирований: 3ABI