Base digital schemes on complementary bipolar transistors
N. B. AlimovaTashkent University of Information Technologies, Tashkent, UzbekistanЗ.Х. АРИПОВАTashkent University of Information Technologies, Tashkent, UzbekistanSh. T. ToshmatovTashkent University of Information Technologies, Tashkent, Uzbekistan
2010en
ABI
Аннотация
A way to use the injection-voltaic mode of the bipolar transistor in order to create electronic switching cells (electronics keys), which are the basis of digital electronic elements, with power supply voltage of order of the contact potential difference is investigated.
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Показатели — AkademScholar · Скоро