A multi-scale approach for performance assessment of hydrogenated graphene Field-Effect Transistors

Performance analysis of Field Effect Transistors based on hydrogenated graphene is performed through a multi-scale approach based on calculations of the energy bands by means of GW approximation, a three-nearest neighbor (3NN) sp <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> tight-binding Hamiltonian, and a ballistic transport model. The considered device exhibits large I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</sub> and I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</sub> /I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">off</sub> ratios, due to the large bandgap, with reduced lithographic constrains as compared to one-dimensional channels.

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