Статья

Relaxation process features of photoconductivity in p-i-n structures

R. A. MumimovPhysical-Technical Institute, 100084 Tashkent, Uzbekistan

Semiconductor Physics Quantum Electronics & Optoelectronicsjournal2010en

ABI

Аннотация

We studied the relaxation processes of photoconductivity in Si(Li) p-i-n structures. It has been shown that a clearly pronounced "well" is observed in time dependences of the photovoltage pulse after photoexcitation of these structures. Our experimental data are indicative of abnormal relaxation of photoconductivity in silicon pi-n diodes.

Темы

Thin-Film Transistor Technologies Transition Metal Oxide Nanomaterials Thermography and Photoacoustic Techniques

Идентификаторы

DOI: 10.15407/spqeo13.03.259

Цитирования и источники

Цитирований: 0Использованных источников: 6

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