Antireflection coatings for solar photoelectric elements based on SiO2 and TiO2 mixed oxides
В. Г. ДыскинInstitute of Material Sciences, Academy of Sciences of Uzbekistan, Tashkent, UzbekistanI. A. TursunbaevInstitute of Material Sciences, Academy of Sciences of Uzbekistan, Tashkent, Uzbekistan
ABI
Аннотация
Computer modeling of one-layer antireflection coating based on SiO2 and TiO2 mixed oxides was carried out for solar elements. It was concluded that a photoelectric current can be increased by varying the thickness of the covering within the limits of 55–90 nm, while the concentration of SiO2 in TiO2 shall not exceed 30%. A method of magnetron spattering was offered as a method for application of the coating based on a SiO2-TiO2 mixture.
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