Effect of impurities on radiation-induced defect generation in BaFI crystals
И. НуритдиновInstitute of Nuclear Physics, Academy of Sciences of Uzbekistan, Ulugbek, Tashkent, 100214, UzbekistanB. T. AtashovBerdakh State University, ul. Akademika Abdirova 1, Nukus, 742000, Karakalpakstan, UzbekistanA. B. UteniyazovaAjiniyaz State Pedagogical Institute, ul. Dosnazarova 104, Nukus, 230100, Karakalpakstan, Uzbekistan
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Аннотация
We have studied radiation-induced defect formation processes in gamma-irradiated BaFI crystals doped with Eu, W, and Tl and compared them with those in unirradiated BaFI. The results demonstrate that the radiation-induced defect formation processes in the Eu- and W-doped crystals differ insignificantly from those in the undoped samples. In the Tl-doped crystals, the radiation-induced formation of native and extrinsic defects undergoes drastic changes because of the competition between native anion vacancies and Tl2+ dopant ions for electron capture.
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