Работы, цитирующие эту работу

Работ: 1

Работа: The relative current change, concentration, and carrier mobility in silicon samples doped nickel and at pulse hydrostatic pressure

1. Development of technology for creating high-voltage p0–n0 junctions based on GaAs

   A. M. Sultanov, Abdusattor Abdukarimov, M. Z. Kufian

   СтатьяSemiconductor Lasers and Optical DevicesBulletin of the Karaganda University Physics Series2023Цитирований: 1

   ABIABI:AkademIndex/openalex/2023.article.003365