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New Aspects Of The Behavior Of The Photovoltaic Effect In Series-Connected Structures

Aripov Khayrulla KabilovichDepartment of Electronics and Radio Engineering, Tashkent University of Information Technologies named after Muhammad al Khwarizmi, Tashkent, UzbekistanAripova Umida KhayrullayevnaDepartment of systems of TV and radiobroadcasting, Tashkent University of Information Technologies named after Muhammad al Khwarizmi, Tashkent, UzbekistanToshmatov Shunqorjon ToshpulatovichDepartment of Electronics and Radio Engineering, Tashkent University of Information Technologies named after Muhammad al Khwarizmi, Tashkent, Uzbekistan
ABI

Аннотация

It has been experimentally shown that the direct voltage and current of the photodiode in the photovoltaic regime strongly depend on the width of the forbidden band of the semiconductor material, the type of the load and its resistance. Schemes of series-connected photodiodes in the photovoltaic mode with a nonlinear load on a bipolar transistor perform the function of a radiation sensor.

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