Статья

Revealing Intrinsic Superconductivity of the Nb/BiSbTe<sub>2</sub>Se Interface

Andrei KudriashovAdvanced mesoscience and nanotechnology centre Moscow Institute of Physics and Technology Dolgoprudny 141700 RussiaIan BabichAdvanced mesoscience and nanotechnology centre Moscow Institute of Physics and Technology Dolgoprudny 141700 RussiaRazmik A. HovhannisyanAdvanced mesoscience and nanotechnology centre Moscow Institute of Physics and Technology Dolgoprudny 141700 RussiaA. Yu. ShishkinAdvanced mesoscience and nanotechnology centre Moscow Institute of Physics and Technology Dolgoprudny 141700 RussiaС. Н. КозловAdvanced mesoscience and nanotechnology centre Moscow Institute of Physics and Technology Dolgoprudny 141700 RussiaAlexander FedorovLeibniz Institute for Solid State and Materials Research P.O. Box 270116 D‐01171 Dresden GermanyD. V. VyalikhDonostia International Physics Center (DIPC) Donostia‐San Sebastian 20018 Basque Country SpainEkaterina KhestanovaDepartment of Physics and Engineering ITMO University Saint Petersburg 191002 RussiaM. Yu. KupriyanovNational University of Science and Technology MISIS Moscow 119049 RussiaV. S. StolyarovAdvanced mesoscience and nanotechnology centre Moscow Institute of Physics and Technology Dolgoprudny 141700 Russia

Advanced Functional Materialsjournal2022en

ABI

Аннотация

Abstract Typically, topological superconductivity is reachable via proximity effect by a direct deposition of superconductor (S) on top of a topological insulator (TI) surface. Here, the double critical current in the Josephson junctions based on the topological insulator is observed in the fabricated planar Superconducting Quantum Interference Devicea. By measuring critical currents as a function of temperature and magnetic field, it is shown that the second critical current stems from the intrinsic superconductivity of the S–TI interface, which is supported by the modified Resistively Shunted Junction model and Transmission Electron Microscopy studies. This complex structure of the interface should be taken into account when the technological process involves Ar‐plasma cleaning.

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Темы

Topological Materials and Phenomena Graphene research and applications 2D Materials and Applications

Идентификаторы

DOI: 10.1002/adfm.202209853

Цитирования и источники

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