Без названия
М. К. БахадырхановTashkent State Technical University, Universitetskaia str. 2, 100095, Tashkent, UzbekistanК. А. ИсмайловKarakalpak State University named after Berdakh, 230112, Nukus, UzbekistanE ZhKarakalpak State University named after Berdakh, 230112, Nukus, UzbekistanKosbergenovKarakalpak State University named after Berdakh, 230112, Nukus, UzbekistanH.-J SchulzeH fnerF.-J NiedernostheideF LkermannA SchulzM TomassiniJ VeirmanR VaracheF ShimuraC FullerR LoganM BakhadyrkhanovTashkent State Technical University, Universitetskaia str. 2, 100095, Tashkent, UzbekistanB IsmaylovS TachilinK IsmailovKarakalpak State University named after Berdakh, 230112, Nukus, UzbekistanN ZikrillaevJ LindroosD FenningD BacklundZ SaparniyazovaS IsamovZ KenzhaevS KoveshnikovK TorigoeT OnoW WijaranakulaJ BorensteinD PeakJ Corbett
ABI
Аннотация
This work shows that the introduction of nickel atoms in the process of growing silicon crystals enables to obtain a material with stable electrophysical parameters during thermal annealing in the wide temperature range 450…1050 °С and duration (t = 0.5...25 hours).This is the most cost-effective way to create material for semiconductor devices and solar cells with stable parameters.
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