Работы, на которые ссылается эта работа

Работ: 8

Работа: Investigation of Thermo-Electrical Instabilities in a Semiconductor as 2D Dynamical Systems

1. Excited states at deep centers in Si:S and Si:Se

   H. G. Grimmeiss, B. Skarstam

   Статья1981Цитирований: 3

   ABIABI:AkademIndex/openalex/2026.other.609359

2. An Analytical, Temperature‐dependent Modelfor Majority‐ and Minority‐carrier Mobilityin Silicon Devices

   Susanna Reggiani, M. Valdinoci, Luigi Colalongo +2

   Статья1999Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.644655

3. Capture, emission and recombination at a deep level via an excited state

   Gregory J. Rees, H. G. Grimmeiss, Erik Janzén +1

   Статья1980Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.644657

4. The heat capacity of pure silicon and germanium and properties of their vibrational frequency spectra

   P. Flubacher, A. J. Leadbetter, J. A. Morrison

   Статья1959Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.644658

5. Thermal Conductivity of Silicon and Germanium from 3°K to the Melting Point

   C. J. Glassbrenner, Glen A. Slack

   Статья1964Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.644659

6. On integration of fractional expressions containing transcendental functions for one boundary value problem

   Mukaddas Arzikulova

   Статья2023Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.644660

7. Solid State Physics

   J. S. Blakemore

   Книга1985Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.707848

8. Mathematical Model for Thermo-Electrical Instabilities in Semiconductors

   Mukaddas Arzikulova

   СтатьяThermal properties of materialsMathematical Modelling and Applications2024Цитирований: 1

   ABIABI:AkademIndex/openalex/2024.article.004193