Работы, цитирующие эту работу

Работ: 4

Работа: Resistive Switching Behavior of SnO₂/ZnO Heterojunction Thin Films for Non-Volatile Memory Applications

1. NDR in Co:SnO ₂ Memristors: Nanocluster Control for Enhanced Performance

   Jamoliddin X. Murodov, Sh. U. Yuldashev, Azamat O. Arslanov +3

   СтатьяAdvanced Memory and Neural ComputingCrystal Growth & Design2025Цитирований: 2

   ABIABI:AkademIndex/openalex/2025.article.001458

2. Magnetically Tunable Resistive Switching in Mn-Doped SnO ₂ Thin Films

   Jamoliddin X. Murodov, Sh. U. Yuldashev, Azamat O. Arslanov +3

   СтатьяZnO doping and propertiesCrystal Growth & Design2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.013968

3. Defect-engineered resistive switching and NDR behavior in Mn-doped SnO2 memristors

   Jamoliddin X. Murodov, Sh. U. Yuldashev, Azamat O. Arslanov +3

   СтатьяAdvanced Memory and Neural ComputingJournal of Materials Science Materials in Electronics2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.020423

4. Structural, Morphological, and Electrophysical Properties of SnO2/ZnO Heterostructures Co-deposited on Si Substrates

   Azim K. Soatov, Abdumajit R. Turayev, Sh. U. Yuldashev +1

   ПрепринтZnO doping and propertiesResearch Square2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.preprint.001357