Работы, на которые ссылается эта работа

Работ: 9

Работа: Resistive Switching Behavior of SnO₂/ZnO Heterojunction Thin Films for Non-Volatile Memory Applications

1. Без названия

   ДругоеЦитирований: 4

   ABIABI:AkademIndex/openalex/2026.other.313605

2. Dual-doped ZnO-based magnetic semiconductor resistive switching response for memristor-based technologies

   Naveed ur Rehman, Nasir Rahman, Iftikhar Ahmad +8

   СтатьяAdvanced Memory and Neural ComputingJournal of Materials Science Materials in Electronics2024Цитирований: 2

   ABIABI:AkademIndex/openalex/2024.article.000393

3. Negative differential resistance and resistive switching in SnO2/ZnO interface

   Rohit Pant, Nagabhushan Patel, Karuna Kar Nanda +1

   Статья2017Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.313600

4. Experimental demonstration of SnO₂ nanofiber-based memristors and their data-driven modeling for nanoelectronic applications

   Soumi Saha, Madadi Chetan Kodand Reddy, Tati Sai Nikhil +6

   Статья2023Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.313601

5. Impact of Precursor Molar Concentration on the Structural and Optical Properties of ZnO Thin Films Synthesized by Ultrasonic Spray Pyrolysis

   Azamat O. Arslanov, Sh. U. Yuldashev, Noiba U. Botirova +3

   СтатьяZnO doping and propertiesPhysical Science International Journal2025Цитирований: 2

   ABIABI:AkademIndex/openalex/2026.other.313604

6. Memristive Devices from CuO Nanoparticles

   Pundalik D. Walke, Abu ul Hassan S. Rana, Sh. U. Yuldashev +5

   СтатьяAdvanced Memory and Neural ComputingNanomaterials2020Цитирований: 1

   ABIABI:AkademIndex/openalex/2020.article.000254

7. Без названия

   ДругоеЦитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.313599

8. Без названия

   ДругоеЦитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.313602

9. Без названия

   ДругоеЦитирований: 1

   ABIABI:AkademIndex/openalex/2026.other.313603