Работы, цитирующие эту работу

Работ: 2

Работа: Memristive Switching Behavior of Sol–Gel Derived Ga₂O₃ Thin Films

1. Magnetically Tunable Resistive Switching in Mn-Doped SnO ₂ Thin Films

   Jamoliddin X. Murodov, Sh. U. Yuldashev, Azamat O. Arslanov +3

   СтатьяZnO doping and propertiesCrystal Growth & Design2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.013968

2. Defect-engineered resistive switching and NDR behavior in Mn-doped SnO2 memristors

   Jamoliddin X. Murodov, Sh. U. Yuldashev, Azamat O. Arslanov +3

   СтатьяAdvanced Memory and Neural ComputingJournal of Materials Science Materials in Electronics2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.020423