Enhanced optoelectronic properties of ZnO thin films through boron and fluorine Co-doping

This research investigates how co-doping zinc oxide (ZnO) thin films with boron (B) and fluorine (F) affects their structural, electrical, and optical properties Leveraging a chemical solution deposition technique and advanced characterization methods, the research investigates the synergistic impact of simultaneous doping with boron (B) and fluorine (F) on enhancing ZnO’s performance for optoelectronic applications. X-ray diffraction (XRD) analysis revealed significant lattice distortions, reduced crystallite sizes, and improved crystallinity with increasing dopant concentrations. Scanning electron microscopy (SEM) images demonstrated reduced grain sizes and increased surface roughness, correlating with enhanced morphological properties. Photoluminescence (PL) spectroscopy highlighted shifts in emission peaks and increased radiative recombination efficiency, indicating modifications to defect states and band structure. Hall effect measurements confirmed improvements in carrier concentration, mobility, and overall electrical conductivity, peaking at optimized doping levels. The obtained results demonstrate that ZnO thin films co-doped with boron (B) and fluorine (F) exhibit significant potential for utilization in advanced optoelectronic technologies, particularly in light-emitting diodes, photodetectors, and solar cell devices. The systematic approach provides valuable insights into doping-induced property modifications, offering a robust framework for tailoring ZnO-based semiconductors for specific applications.

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