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The effect of non-stoichiometry in Sb2Se3 films on their phonon and electronic properties in the infrared range

B. AndriyevskyFaculty of Electronics and Computer Sciences, Koszalin University of Technology, Śniadeckich str. 2, 75-453, Koszalin, Poland. [email protected]Leszek BychtoFaculty of Electronics and Computer Sciences, Koszalin University of Technology, Śniadeckich str. 2, 75-453, Koszalin, PolandA. PatrynFaculty of Electronics and Computer Sciences, Koszalin University of Technology, Śniadeckich str. 2, 75-453, Koszalin, PolandT.M. RazykovPhysical-Technical Institute of Uzbekistan Academy of Sciences, Chingiz Aytmatov 2B, 100084, Tashkent, UzbekistanB. A. ErgashevPhysical-Technical Institute of Uzbekistan Academy of Sciences, Chingiz Aytmatov 2B, 100084, Tashkent, UzbekistanK.M. KouchkarovPhysical-Technical Institute of Uzbekistan Academy of Sciences, Chingiz Aytmatov 2B, 100084, Tashkent, UzbekistanР. ХуррамовPhysical-Technical Institute of Uzbekistan Academy of Sciences, Chingiz Aytmatov 2B, 100084, Tashkent, UzbekistanD. Z. IsakovPhysical-Technical Institute of Uzbekistan Academy of Sciences, Chingiz Aytmatov 2B, 100084, Tashkent, UzbekistanM. PirimmatovPhysical-Technical Institute of Uzbekistan Academy of Sciences, Chingiz Aytmatov 2B, 100084, Tashkent, UzbekistanU. SchadeInstitute for Electronic Structure Dynamics, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Albert-Einstein-Strasse 15, 12489, Berlin, GermanyFlorian RuskeSolar Energy Division, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Kekuléstraße 5, 12489, Berlin, GermanyAlexander SteigertSolar Energy Division, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Kekuléstraße 5, 12489, Berlin, GermanyRené SchwiddessenSolar Energy Division, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Kekuléstraße 5, 12489, Berlin, GermanyLjiljana PuškarInstitute for Electronic Structure Dynamics, Helmholtz-Zentrum Berlin für Materialien und Energie GmbH, Albert-Einstein-Strasse 15, 12489, Berlin, GermanyAlexander VeberDepartment of Chemistry, Humboldt Universität zu Berlin, Brook-Taylor-Straße 2, 12489, Berlin, GermanyAndrii I. KashubaDepartment of General Physics, Lviv Polytechnic National University, Bandera str. 12, Lviv, 79013, UkraineM. PiaseckiJ. Dlugosz University Częstochowa, Armii Krajowej 13/15, 42200, Częstochowa, Poland. [email protected]
Scientific Reportsjournal2025en
ABI

Аннотация

Due to the noticeable part of Sb2Se3 films in solar cell technology, the deposition of Sb2Se3 films with the desirable content and improved crystalline perfection is of crucial importance. Therefore, extensive experimental and theoretical studies of the electronic and phonon properties of these materials are of interest. In this work, the stoichiometry and morphology of antimony selenide films are correlated to their optical properties in the far-infrared regime and compared to theoretically calculated properties for an ideal crystal. For this study, the reflectance of a series of 1.4–1.7 μm thick SbxSey layers, produced on soda-lime glass substrates by molecular beam chemical deposition, was measured in the spectral range of 25–5000 cm⁻¹ using an FT-IR spectrometer and synchrotron radiation. The near-surface and bulk crystallographic structure and phase composition were previously determined using grazing incidence X-ray diffraction (GIXRD) under varying incident angles. The chemical composition and morphology were investigated using scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDX). It was shown that the spectral positions of numerous maxima of the reflectance of SbxSey layers for various x/y indices in the phonon excitation range of 25–230 cm⁻¹ are consistent with the positions of the maxima of the imaginary part of the dielectric function of Sb2Se3 crystals, calculated within the framework of density functional theory. A significant increase in the reflectance values was observed for SbxSey layers containing the largest relative amount of antimony x/y, which may be due to the increased content of the metallic form of antimony compared to the amount of the pure Sb2Se3 semiconducting phase. A correlation was found between the technological parameters of production (temperature) and the final chemical composition and morphology of the SbxSey layers. To explain the observed relationships, calculations of the cohesive energy of Sb2Se3 and Sb crystals and the binding energy of the residual antimony atom inside and on the surface of the antimony selenide supercell were performed. The main conclusions of the theoretical calculations are consistent with the results of EDX and XRD measurements of the SbxSey layers.

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