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Fluoride‐Based Halide Double Perovskites X <sub>2</sub> BiAuF <sub>6</sub> (X = K, Rb): A Computational Insight into their Structural Integrity, Optoelectronic Performance, and Thermoelectric Potential

Faouzi DidiDepartment of Common Core in Technology Laboratory of Physics of Experimental Techniques and Their Applications University Yahia Fares of Medea Medea 26000 AlgeriaHussain J. AlathlawiDepartment of Physical Sciences Physics Division College of Science Jazan University P.O. Box. 114 Jazan 45142 Kingdom of Saudi ArabiaKarrar Hazim SalemCollege of Medical and Health Technologies Al‐Zahraa University for Women Karbala IraqInès Hilali‐JaghdamDepartment of Computer Science and Information Technology Applied College Princess Nourah bint Abdulrahman University P.O. Box 84428 Riyadh 11671 Saudi ArabiaMohamed S. SolimanDepartment of Electrical Engineering College of Engineering Taif University Taif 21944 Saudi ArabiaTamer H. A. HasaninDepartment of Chemistry College of Science Jouf University P.O. Box 2014 Sakaka Saudi ArabiaHayitov Abdulla NurmatovichDepartment of Transports systems Urgench State University Urgench UzbekistanKhudoynazarov Egambergan MadraximovichDepartment of General Professional Sciences Mamun University Uzbekistan Khorezm UzbekistanRasheed Ahmad KheraDepartment of Chemistry University of Agriculture Faisalabad 38000 Pakistan
Energy Technologyjournal2025en
ABI

Аннотация

Halide double perovskites (HDPs) are emerging as tunable and eco‐friendly alternatives to lead‐based materials for advanced optoelectronic and energy applications. This study presents a comprehensive first‐principles investigation of the structural, electronic, optical, elastic, and thermoelectric (TE) properties of fluoride‐based HDPs X 2 BiAuF 6 (X = K, Rb), using density functional theory within the full potential linearized augmented plane wave framework and the Tran–Blaha modified Becke–Johnson potential. The calculated Goldschmidt tolerance factor τ G values of 0.95 for Rb 2 BiAuF 6 and 0.92 for K 2 BiAuF 6 confirm a stable cubic structure. Electronic structure calculations using mBJ potential reveal indirect bandgaps of 1.29 eV for K 2 BiAuF 6 and 1.31 eV for Rb 2 BiAuF 6 , indicating their suitability for optoelectronic applications. While HSE06 functional increases the bandgap values to 2.106 and 2.229 eV, respectively. Additionally, optical analysis via the dielectric function reveals strong absorption in the visible and UV regions, along with low reflectance below 0.20. The static refractive index n (0) is found to be 1.73 for K 2 BiAuF 6 and 1.72 for Rb 2 BiAuF 6 . TE properties are evaluated using the BoltzTraP simulation tool, based on electronic structure inputs from first‐principles calculations. Both materials exhibit a maximum thermopower factor of 4.26 × 10 11 Wk −2 m −1 s 1 at 800 K, increasing with temperature. The results demonstrate appreciable electrical conductivity and substantial Seebeck coefficients, emphasizing their potential for integration into next‐generation optoelectronic and TE devices.

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