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Bromine-functionalized carbazole derivatives in perovskite precursors: defect passivation for enhanced perovskite photovoltaics

Qianwen CaoMaterials Genome Institute (MGI), Shanghai University, Shanghai 200444, P. R. ChinaLifang WuMaterials Genome Institute (MGI), Shanghai University, Shanghai 200444, P. R. ChinaYe WangMaterials Genome Institute (MGI), Shanghai University, Shanghai 200444, P. R. ChinaXiaojie LiuMaterials Genome Institute (MGI), Shanghai University, Shanghai 200444, P. R. ChinaHengji LiMaterials Genome Institute (MGI), Shanghai University, Shanghai 200444, P. R. ChinaTenglong XuMaterials Genome Institute (MGI), Shanghai University, Shanghai 200444, P. R. ChinaQiling XiaoMaterials Genome Institute (MGI), Shanghai University, Shanghai 200444, P. R. ChinaChang XueMaterials Genome Institute (MGI), Shanghai University, Shanghai 200444, P. R. ChinaXingli ZouSchool of Materials Science and Engineering, Shanghai University, Shanghai 200444, ChinaTianhao WuMaterials Genome Institute (MGI), Shanghai University, Shanghai 200444, P. R. ChinaEmilio Jose Juarez-PerezAragonese Foundation for Research and Development (ARAID), Government of Aragon, Zaragoza 50018, SpainMarta HaroInstitute of Nanoscience of Aragon, University of Zaragoza, Zaragoza 50018, SpainS. B. DonaevFaculty of Electronics and Automation Tashkent State Technical University, University Str. 2, Tashkent 100095, UzbekistanShenghao WangMaterials Genome Institute (MGI), Shanghai University, Shanghai 200444, P. R. China
Nanoscalejournal2026en
ABI

Аннотация

-carbazol-9-yl)ethylphosphonic acid (Br-2PACz), were directly incorporated into perovskite precursors to investigate their influence on film formation and electronic structure. Compared with the control film, the incorporation of both 2PACz and Br-2PACz improved film uniformity and morphology, and significantly prolonged carrier lifetimes, indicating suppressed non-radiative recombination and reduced defect density. Notably, Br-2PACz shows a more pronounced effect: the bromine substituent enhances the electron-withdrawing character of the molecule, leading to a deeper highest occupied molecular orbital (HOMO) level and pronounced modulation of the interfacial electronic structure. As a result, the energy-level alignment at the perovskite/electron-transport interface is optimized, facilitating charge extraction and defect passivation. These synergistic effects contribute to higher power conversion efficiency (PCE). This work demonstrates an additive-engineering approach based on carbazole SAMs to control perovskite crystallization and interfacial energetics, providing a promising pathway toward high-efficiency PSCs.

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