Optimization of perovskite memristors functionality via singlewalled carbon nanotube integration
Аннотация
In the study, the performance and working mechanisms of memristors based on organicinorganichalide perovskite (OIHP) materials with two distinct configurations: ITO/PEDOT:PSS/Cs0.15MA0.15FA0.7Pb(I0.8Br0.2)3/InGa and PSS/Cs0.15MA0.15FA0.7Pb(I0.8Br0.2)3/CNT/InGaare investigated. Perovskite materials have been shown to exhibit resistive switching behaviorsuitable for memristor applications due to their ion migration and filament formation properties.Here, the impact of incorporating single-walled carbon nanotubes (SWCNTs) into thestructure is examined. Results indicate that the presence of SWCNTs enhances device performance,including increased current density and improved on/off ratios. These enhancementsare attributed to the excellent electrical conductivity and filament formation properties ofSWCNTs.