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Novel stable high-performance electronic, optical, and thermoelectric properties of 2D CdPS <sub>3</sub> monolayer for energy applications

Muhammad Amir KhanFaculty of Physical and Numerical Sciences, Qurtuba University of Science and Information Technology Peshawar, Peshawar 25100, Khyber Pakhtunkhwa, PakistanZahid UllahPhysics Department, Islamia College University Peshawar, Peshawar 25120, Khyber Pakhtunkhwa, PakistanSattam Al OtaibiDepartment of Physics, University of Lakki Marwat, Lakki Marwat, Khyber Pakhtunkhwa, PakistanWafa Mohammed AlmalkiDepartment of Physics, Turabah University College, Taif University, P. O. Box 11099, Taif 21944, Saudi ArabiaSherzod AbdullaevSchool of Exact Sciences, National Pedagogical University of Uzbekistan, Tashkent, UzbekistanNoureddine ElboughdiriChemical Engineering Department, College of Engineering, University of Ha’il, P. O. Box 2440, Ha’il 81441, Saudi Arabia
Modern Physics Letters Bjournal2026en
ABI

Аннотация

In this work, we investigate the structural, electronic, optical, and thermoelectric properties using density functional theory within the spin-polarized GGA-PBEsol functional. The spin-resolved band structure, which reveals a significant semiconducting gap that is 2.7[Formula: see text]eV, plays a crucial role in charge transport and optical transitions. Our analysis of the spin-resolved dielectric functions highlighted significant ultraviolet absorption, a broad spectrum of interband transitions, and minimal static dielectric screening. Optical activity remains unaffected by spin, as evidenced by the identical responses in both spin-up and spin-down states. Our study of thermoelectric transport concentrated on essential physical processes that greatly influence electrical conductivity, thermal transport at elevated temperatures, and the Seebeck coefficient. These processes include thermal smearing, phonon scattering, and bipolar conduction. Additionally, bipolar effects have been shown to reduce thermoelectric efficiency at higher temperatures, emphasizing the importance of accurate band-gap calculations for optimizing material performance in thermoelectric applications. The ZT values for spin up and down are 1.1 at elevated temperature. The material’s combination of optical and transport properties indicates its potential for use in UV optoelectronic devices and thermoelectric energy conversion, particularly in practical applications and future research.

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