Статья

Buried homojunction in CdS/Sb2Se3 thin film photovoltaics generated by interfacial diffusion

Ying ZhouShenzhen R&D Center, Huazhong University of Science and Technology 2 , Shenzhen 518000, People's Republic of ChinaLi YangShenzhen R&D Center, Huazhong University of Science and Technology 2 , Shenzhen 518000, People's Republic of ChinaJiajun LuoShenzhen R&D Center, Huazhong University of Science and Technology 2 , Shenzhen 518000, People's Republic of ChinaDeng‐Bing LiShenzhen R&D Center, Huazhong University of Science and Technology 2 , Shenzhen 518000, People's Republic of ChinaXinsheng LiuKey Laboratory for Special Functional Materials of Ministry of Education, Collaborative Innovation Center of Nano Functional Materials and Applications, Henan Province, Henan University 3 , Kaifeng 475004, People's Republic of ChinaChao ChenShenzhen R&D Center, Huazhong University of Science and Technology 2 , Shenzhen 518000, People's Republic of ChinaHuaibing SongShenzhen R&D Center, Huazhong University of Science and Technology 2 , Shenzhen 518000, People's Republic of ChinaJingyuan MaBeijing Institute of Chemistry, Chinese Academy of Sciences 4 , Beijing 100190, People's Republic of ChinaDing‐Jiang XueBeijing Institute of Chemistry, Chinese Academy of Sciences 4 , Beijing 100190, People's Republic of ChinaBo YangShenzhen R&D Center, Huazhong University of Science and Technology 2 , Shenzhen 518000, People's Republic of ChinaJiang TangShenzhen R&D Center, Huazhong University of Science and Technology 2 , Shenzhen 518000, People's Republic of China

2017en

ABI

Аннотация

Antimony selenide (Sb2Se3) emerges as a very promising non-toxic absorber material for thin film photovoltaics, and most of the devices, either in the superstrate or substrate configuration, employed CdS as the buffer layer. Due to the peculiar one-dimensional crystal structure of Sb2Se3, severe interfacial diffusion would be expected. In this letter, the interfacial diffusion in CdS/Sb2Se3 photovoltaics was carefully characterized from a combined material and device physics characterization. The results indicated that a buried homojunction located deep inside the Sb2Se3 absorber layer due to Cd diffusion, instead of the apparent CdS/Sb2Se3 heterojunction, dictated charge separation and device performance in Sb2Se3 thin film solar cells. Cd diffusion converted p-type Sb2Se3 into n-type by introducing a donor level with an activation energy of 0.22 eV. Our studies deepen the understanding of Sb2Se3 photovoltaics and shed light on their further performance optimization.

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Идентификаторы

DOI: 10.1063/1.4991539

Цитирования и источники

Цитирований: 2Использованных источников: 0

Показатели — AkademScholar