Статья

6.5% Certified Efficiency Sb<sub>2</sub>Se<sub>3</sub> Solar Cells Using PbS Colloidal Quantum Dot Film as Hole-Transporting Layer

Chao ChenSchool of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, 430074, Hubei, PR ChinaLiang WangSchool of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, 430074, Hubei, PR ChinaLiang GaoSchool of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, 430074, Hubei, PR ChinaDahyun NamDepartment of Physics, Sogang University, Seoul 04107, KoreaDeng‐Bing LiSchool of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, 430074, Hubei, PR ChinaKanghua LiSchool of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, 430074, Hubei, PR ChinaYang ZhaoSchool of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, 430074, Hubei, PR ChinaCong GeSchool of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, 430074, Hubei, PR ChinaHyeonsik CheongDepartment of Physics, Sogang University, Seoul 04107, KoreaHuan LiuSchool of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, 430074, Hubei, PR ChinaHaisheng SongSchool of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, 430074, Hubei, PR ChinaJiang TangSchool of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, 430074, Hubei, PR China

2017en

ABI

Аннотация

Sb2Se3 is a promising candidate for thin-film photovoltaics, with a suitable band gap, benign grain boundaries, Earth-abundant and nontoxic constituents, and excellent stability. However, the low doping density (1013 cm–3) of Sb2Se3 absorber and back contact barrier limit its efficiency. Here we introduced a PbS colloidal quantum dot (CQD) film as the hole-transporting layer (HTL) to construct a n-i-p configured device and overcame these problems. Through simulation-guided optimization, we have significantly improved the efficiency of a Sb2Se3 thin-film solar cell to a new certified record of 6.5%. The PbS CQD HTL not only minimized carrier recombination loss at the back contact and boosted carrier collection efficiency but also contributed photocurrent by its own near-infrared absorption. Furthermore, these n-i-p devices also demonstrated improved device uniformity, achieving 6.39% in a 1.02 cm2 device.

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Идентификаторы

DOI: 10.1021/acsenergylett.7b00648

Цитирования и источники

Цитирований: 5Использованных источников: 0

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