ZnO diode fabricated by excimer-laser doping
Toru AokiResearch Institute of Electronics, Shizuoka University, 3-5-1, Johoku Hamamatsu 432-8011, JapanYoshinori HatanakaResearch Institute of Electronics, Shizuoka University, 3-5-1, Johoku Hamamatsu 432-8011, JapanD. C. LookSemiconductor Research Center, Wright State University, Dayton, Ohio 45435
2000en
ABI
Аннотация
A ZnO diode was fabricated by using a laser-doping technique to form a p-type ZnO layer on an n-type ZnO substrate. A zinc-phosphide compound, used as a phosphorous source, was deposited on the ZnO wafer and subjected to excimer-laser pulses. The current–voltage characteristics showed a diode characteristic between the phosphorous-doped p-layer and the n-type substrate. Moreover, light emission, with a band-edge component, was observed by forward current injection at 110 K.
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