Room temperature dilute magnetic semiconductor response in (Gd, Co) co-doped ZnO for efficient spintronics applications
Ihab ShigidiChemical Engineering Department, King Khalid University, P.O. Box 395, Abha 61411, Saudi ArabiaSattam Al OtaibiDepartment of Electrical Engineering, College of Engineering, Taif University, P.O. Box 110, Taif 21944, Saudia ArabiaKhaled AlthubeitiDepartment of Chemistry, College of Science, Taif University, P.O. Box 110, Taif 21944, Saudia ArabiaSherzod AbdullaevAndijan Machine-Building Institute, Andijan, UzbekistanNasir RahmanDepartment of Physics, University of Lakki Marwat, 28420 KP, PakistanMohammad SohailDepartment of Physics, University of Lakki Marwat, 28420 KP, PakistanAlamzeb KhanDepartment of Pediatrics, Yale School of Medicine, Yale University, New Haven, CT, 06511, USAShahid IqbalDepartment of Physics, Albion College, Albion, Michigan, 49224, USATommaso Del RossoDepartment of Physics, Pontifícia Universidade Católica do Rio de Janeiro, Rua Marques de São Vicente, 22451-900, Rio de Janeiro, BrazilQuaid ZamanAurangzeb KhanDepartment of Pediatrics, Yale School of Medicine, Yale University, New Haven, CT, 06511, USA
ABI
Аннотация
= 0.03) nanotubes exhibit superior electrical conductivity, magnetic and dielectric characteristics compared to pure ZnO. This high ferromagnetism is typically a result of a magnetic semiconductor that has been diluted. In addition, these nanoparticles are utilized to design spintronic-based applications in the form of thin-films.
Перевод пока недоступен