Статья

In Situ Fabrication of 2D WS<sub>2</sub>/Si Type-II Heterojunction for Self-Powered Broadband Photodetector with Response up to Mid-Infrared

Enping WuSchool of Physics and Engineering, and Key Laboratory of Material Physics of Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, ChinaDi WuSchool of Physics and Engineering, and Key Laboratory of Material Physics of Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, ChinaCheng JiaSchool of Physics and Engineering, and Key Laboratory of Material Physics of Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, ChinaYuange WangSchool of Physics and Engineering, and Key Laboratory of Material Physics of Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, ChinaHuiyu YuanHigh Temperature Ceramic Institute, School of Materials Science and Engineering, Zhengzhou University, Zhengzhou, Henan 450052, ChinaLonghui ZengDepartment of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, ChinaTingting XuSchool of Physics and Engineering, and Key Laboratory of Material Physics of Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, ChinaZhifeng ShiSchool of Physics and Engineering, and Key Laboratory of Material Physics of Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, ChinaYongtao TianSchool of Physics and Engineering, and Key Laboratory of Material Physics of Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, ChinaXinjian LiSchool of Physics and Engineering, and Key Laboratory of Material Physics of Ministry of Education, Zhengzhou University, Zhengzhou, Henan 450052, China

2019en

ABI

Аннотация

The high-performance broadband photodetectors have attracted intensive scientific interests due to their potential applications in optoelectronic systems. Despite great achievements in two-dimensional (2D) materials based photodetectors such as graphene and black phosphorus, obvious disadvantages such as low optical absorbance and instability preclude their usage for the broadband photodetectors with the desired performance. An alternative approach is to find promising 2D materials and fabricate heterojunction structures for multifunctional hybrid photodetectors. In this work, 2D WS2/Si heterojunction with a type-II band alignment is formed in situ. This heterojunction device produced a high Ion/Ioff ratio over 10,6 responsivity of 224 mA/W, specific detectivity of 1.5 × 1012 Jones, high polarization sensitivity, and broadband response up to 3043 nm. Furthermore, a 4 × 4 device array of WS2/Si heterojunction device is demonstrated with high stability and reproducibility. These results suggest that the WS2/Si type-II heterojunction is an ideal photodetector in broadband detection and integrated optoelectronic system.

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Идентификаторы

DOI: 10.1021/acsphotonics.8b01675

Цитирования и источники

Цитирований: 2Использованных источников: 0

Показатели — AkademScholar