Resistive switching memory effect of ZrO2 films with Zr+ implanted
Qi LiuInstitute of Microelectronics Laboratory of Nano-fabrication and Novel Devices Integrated Technology, , Chinese Academy of Sciences, Beijing 100029, People’s Republic of ChinaWeihua GuanInstitute of Microelectronics Laboratory of Nano-fabrication and Novel Devices Integrated Technology, , Chinese Academy of Sciences, Beijing 100029, People’s Republic of ChinaShibing LongInstitute of Microelectronics Laboratory of Nano-fabrication and Novel Devices Integrated Technology, , Chinese Academy of Sciences, Beijing 100029, People’s Republic of ChinaRui JiaInstitute of Microelectronics Laboratory of Nano-fabrication and Novel Devices Integrated Technology, , Chinese Academy of Sciences, Beijing 100029, People’s Republic of ChinaMing LiuInstitute of Microelectronics Laboratory of Nano-fabrication and Novel Devices Integrated Technology, , Chinese Academy of Sciences, Beijing 100029, People’s Republic of ChinaJunning ChenAnhui University College of Electronics and Technology, , Hefei 230039, People’s Republic of China
2008en
ABI
Аннотация
The Au∕Cr∕Zr+-implanted-ZrO2∕n+-Si sandwiched structure exhibits reversible bipolar resistive switching behavior under dc sweeping voltage. The resistance ratio (Rratio) of high resistive state and low resistive state is as large as five orders of magnitude with 0.5V readout bias. Zr+-implanted-ZrO2 films exhibit good retention characteristics and high device yield. The impact of implanted Zr+ ions on resistive switching performances is investigated. Resistive switching of the fabricated structures is explained by trap-controlled space charge limited current conduction.
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