High Uniformity of Resistive Switching Characteristics in a Cr/ZnO/Pt Device
Wen-Yuan ChangInstitute of Photonics and Optoelectronics, and Department of Electrical Engineering, National Taiwan University, Taipei 106, TaiwanHsin-Wei HuangDepartment of Materials Science and Engineering, National TsingHua University, Hsinchu 300, TaiwanWei‐Ting WangDepartment of Materials Science and Engineering, National TsingHua University, Hsinchu 300, TaiwanCheng-Hao HouDepartment of Materials Science and Engineering, National TsingHua University, Hsinchu 300, TaiwanYu‐Lun ChuehDepartment of Materials Science and Engineering, National TsingHua University, Hsinchu 300, TaiwanJr‐Hau HeInstitute of Photonics and Optoelectronics, and Department of Electrical Engineering, National Taiwan University, Taipei 106, Taiwan
2012en
ABI
Аннотация
This study investigates the resistive switching behavior of Pt, Al, and Cr electrodes for ZnO-based resistance random access memory. Results show that the existence of oxygen ions in the electrode plays an important role in the resistive switching behavior during filament reduction and oxidization. The Cr/ZnO/Pt structure exhibited a significant improvement in resistive switching parameters such as operation voltages and resistance states. This is most likely due to the partial formation of oxidation layers, namely CrOx at the Cr/ZnO interface. These layers act as oxygen reservoir or oxygen supplier, and improve the efficiency of oxygen ion exchange near the electrode/oxide interface.
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