Работы, цитирующие эту работу

Работ: 4

Работа: Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges

1. Resistive Switching Properties in Memristors for Optoelectronic Synaptic Memristors: Deposition Techniques, Key Performance Parameters, and Applications

   Sattam Al Otaibi, Naveed ur Rehman, Shahid Iqbal +2

   СтатьяAdvanced Memory and Neural ComputingACS Applied Electronic Materials2023Цитирований: 6

   ABIABI:AkademIndex/openalex/2023.article.000048

2. High-stability resistive switching memristor with high-retention memory window response for brain-inspired computing

   Rajwali Khan, Shahid Iqbal, Kwun Nam Hui +4

   СтатьяAdvanced Memory and Neural ComputingSensors and Actuators A Physical2025Цитирований: 2

   ABIABI:AkademIndex/openalex/2025.article.000136

3. Magnetically Tunable Resistive Switching in Mn-Doped SnO ₂ Thin Films

   Jamoliddin X. Murodov, Sh. U. Yuldashev, Azamat O. Arslanov +3

   СтатьяZnO doping and propertiesCrystal Growth & Design2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.013968

4. Defect-engineered resistive switching and NDR behavior in Mn-doped SnO2 memristors

   Jamoliddin X. Murodov, Sh. U. Yuldashev, Azamat O. Arslanov +3

   СтатьяAdvanced Memory and Neural ComputingJournal of Materials Science Materials in Electronics2026Цитирований: 0

   ABIABI:AkademIndex/openalex/2026.article.020423