Статья

Resistive switching of Au/ZnO/Au resistive memory: an in situ observation of conductive bridge formation

Chung-Nan PengDepartment of Materials Science & Engineering, National Tsing Hua University, No, 101, Sec, 2, Kuang-Fu Rd,, Hsinchu, 30013, Taiwan. [email protected]Chun-Wen WangDepartment of Materials Science & Engineering, National Chiao-Tung University, No. 1001, University Rd, Hsinchu, 30013, TaiwanTsung-Cheng ChanCenter For Nanotechnology, Material Science, and Microsystem, National Tsing Hua University, No. 101, Sec. 2, Kuang-Fu Rd, Hsinchu, 30013, TaiwanWen-Yuan ChangCenter For Nanotechnology, Material Science, and Microsystem, National Tsing Hua University, No. 101, Sec. 2, Kuang-Fu Rd, Hsinchu, 30013, TaiwanYi-Chung WangCenter For Nanotechnology, Material Science, and Microsystem, National Tsing Hua University, No. 101, Sec. 2, Kuang-Fu Rd, Hsinchu, 30013, TaiwanHung-Wei TsaiCenter For Nanotechnology, Material Science, and Microsystem, National Tsing Hua University, No. 101, Sec. 2, Kuang-Fu Rd, Hsinchu, 30013, TaiwanWen‐Wei WuDepartment of Materials Science & Engineering, National Chiao-Tung University, No. 1001, University Rd, Hsinchu, 30013, TaiwanLih‐Juann ChenDepartment of Materials Science & Engineering, National Tsing Hua University, No. 101, Sec. 2, Kuang-Fu Rd, Hsinchu, 30013, TaiwanYu‐Lun ChuehCenter For Nanotechnology, Material Science, and Microsystem, National Tsing Hua University, No. 101, Sec. 2, Kuang-Fu Rd, Hsinchu, 30013, Taiwan

2012en

ABI

Аннотация

A special chip for direct and real-time observation of resistive changes, including set and reset processes based on Au/ZnO/Au system inside a transmission electron microscope (TEM), was designed. A clear conducting bridge associated with the migration of Au nanoparticles (NPs) inside a defective ZnO film from anode to cathode could be clearly observed by taking a series of TEM images, enabling a dynamic observation of switching behaviors. A discontinuous region (broken region) nearby the cathode after reset process was observed, which limits the flow of current, thus a high resistance state, while it will be reconnected to switch the device from high to low resistance states through the migration of Au NPs after set process. Interestingly, the formed morphology of the conducting bridge, which is different from the typical formation of a conducting bridge, was observed. The difference can be attributed to the different diffusivities of cations transported inside the dielectric layer, thereby significantly influencing the morphology of the conducting path. The current TEM technique is quite unique and informative, which can be used to elucidate the dynamic processes in other devices in the future.

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Идентификаторы

DOI: 10.1186/1556-276x-7-559

Цитирования и источники

Цитирований: 2Использованных источников: 0

Показатели — AkademScholar