Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
Deok‐Hwang KwonDepartment of Materials Science and Engineering, Seoul National University, Seoul 151-744, KoreaKyung Min KimDepartment of Materials Science and Engineering, Seoul National University, Seoul, 151-744, KoreaJae Hyuck JangDepartment of Materials Science and Engineering, Seoul National University, Seoul, 151-744, KoreaJong Myeong JeonDepartment of Materials Science and Engineering, Seoul National University, Seoul, 151-744, KoreaMin Hwan LeeDepartment of Materials Science and Engineering, Seoul National University, Seoul, 151-744, KoreaGun Hwan KimDepartment of Materials Science and Engineering, Seoul National University, Seoul, 151-744, KoreaXiang‐Shu LiAnalytical Research Laboratory, Samsung Advanced Institute of Technology, PO Box 111, Suwon, 440-600, KoreaGyeong‐Su ParkAnalytical Research Laboratory, Samsung Advanced Institute of Technology, PO Box 111, Suwon, 440-600, KoreaBora LeeDepartment of Physics, Ewha Womans University, Seoul, 120-750, KoreaSeungwu HanDepartment of Materials Science and Engineering, Seoul National University, Seoul, 151-744, KoreaMiyoung KimDepartment of Materials Science and Engineering, Seoul National University, Seoul, 151-744, KoreaCheol Seong HwangDepartment of Materials Science and Engineering, Seoul National University, Seoul, 151-744, Korea
2010en
ABI
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