Работы, цитирующие эту работу

Работ: 2

Работа: Resistive Switching Characteristics of Sol–Gel Zinc Oxide Films for Flexible Memory Applications

1. Resistive Switching Properties in Memristors for Optoelectronic Synaptic Memristors: Deposition Techniques, Key Performance Parameters, and Applications

   Sattam Al Otaibi, Naveed ur Rehman, Shahid Iqbal +2

   СтатьяAdvanced Memory and Neural ComputingACS Applied Electronic Materials2023Цитирований: 6

   ABIABI:AkademIndex/openalex/2023.article.000048

2. Cobalt-doped zinc oxide based memristors with nociceptor characteristics for bio-inspired technology

   Naveed ur Rehman, Aziz Ullah, Muhammad Adil Mahmood +6

   СтатьяAdvanced Memory and Neural ComputingRSC Advances2024Цитирований: 4

   ABIABI:AkademIndex/openalex/2024.article.000258