Работы, цитирующие эту работу

Работ: 2

Работа: The mechanism of electroforming of metal oxide memristive switches

1. Resistive Switching Properties in Memristors for Optoelectronic Synaptic Memristors: Deposition Techniques, Key Performance Parameters, and Applications

   Sattam Al Otaibi, Naveed ur Rehman, Shahid Iqbal +2

   СтатьяAdvanced Memory and Neural ComputingACS Applied Electronic Materials2023Цитирований: 6

   ABIABI:AkademIndex/openalex/2023.article.000048

2. High-stability resistive switching memristor with high-retention memory window response for brain-inspired computing

   Rajwali Khan, Shahid Iqbal, Kwun Nam Hui +4

   СтатьяAdvanced Memory and Neural ComputingSensors and Actuators A Physical2025Цитирований: 2

   ABIABI:AkademIndex/openalex/2025.article.000136