Работы, цитирующие эту работу

Работ: 2

Работа: The effect of oxygen vacancy on switching mechanism of ZnO resistive switching memory

1. Resistive Switching Properties in Memristors for Optoelectronic Synaptic Memristors: Deposition Techniques, Key Performance Parameters, and Applications

   Sattam Al Otaibi, Naveed ur Rehman, Shahid Iqbal +2

   СтатьяAdvanced Memory and Neural ComputingACS Applied Electronic Materials2023Цитирований: 6

   ABIABI:AkademIndex/openalex/2023.article.000048

2. Tunable defect engineering in TiON thin films by multi-step sputtering processes: from a Schottky diode to resistive switching memory

   Teng‐Yu Su, Chi‐Hsin Huang, Yu‐Chuan Shih +5

   СтатьяAdvanced Memory and Neural ComputingJournal of Materials Chemistry C2017Цитирований: 0

   ABIABI:AkademIndex/openalex/2017.article.000071