Optoelectronic resistive random access memory for neuromorphic vision sensors
Feichi ZhouDepartment of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, ChinaZheng ZhouInstitute of Microelectronics, Peking University, Beijing, ChinaJiewei ChenDepartment of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, ChinaTsz Hin ChoyDepartment of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, ChinaJingli WangDepartment of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, ChinaNing ZhangDepartment of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, ChinaZiyuan LinDepartment of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, ChinaShimeng YuSchool of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA, USAJinfeng KangInstitute of Microelectronics, Peking University, Beijing, ChinaH.‐S. Philip WongDepartment of Electrical Engineering, Stanford University, Stanford, CA, USAYang ChaiDepartment of Applied Physics, The Hong Kong Polytechnic University, Hong Kong, China. [email protected]
2019en
ABI
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